Abstract
In this paper, we report record DC and RF performance in
β-Ga2O3 High Electron Mobility
Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T
gate with head-length LHL of 180 nm and foot-length
LFL of 120 nm is used in the highly scaled device with
an aspect ratio (LG/tbarrier) of
~ 5. The proposed device takes advantage of a highly
polarized Aluminum Nitride (AlN) barrier layer to achieve high
Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 ×
1013 cm-2, due to spontaneous as
well as piezoelectric polarization components. In the depletion mode
operation, maximum drain current ID,MAX of 1.32 A/mm,
and relatively flat transconductance characteristics with a maximum
value of 0.32 S/mm are measured. The device with source-drain distance
LSD of 1.9 µm exhibits record low specific-on resistance
RON,sp of 0.136 mΩ-cm–2, and
off-state breakdown voltage of 403 V, which correspond to the record
power figure-of-merit (PFoM) of ~ 1194
MW/cm2. Additionally, current gain cut-off frequency
fT and maximum oscillation frequency
fMAX of 48 and 142 GHz are estimated. The obtained
results show the potential of Ga2O3 HEMT
for futuristic power devices.