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\begin{document}

\title{A Sub-6GHz Wideband LNA with High Gain and Low NF in 110-nm SOI CMOS}



\author[1]{Xiaowei Wang}%
\author[1]{Zhiqun Li}%
\author[1]{Tong Xu}%
\affil[1]{Southeast University}%


\vspace{-1em}



  
  \date{June 15, 2024}


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\begin{abstract}
This letter presents a sub-6 GHz wideband low noise amplifier (LNA)
based on double L-type load network and negative feedback technique.
Using the cascode structure combined with the above techniques, a
single-stage wideband LNA with high gain and low noise figure (NF) can
be realized. Fabricated in 110-nm SOI CMOS technology, the proposed LNA
achieves a maximum power gain of 15.2 dB, noise figure (NF) of 1.0--1.56
dB. The 3-dB bandwidth ranges from 3.05--4.55 GHz. The minimum power
input at 1dB compression point (IP1dB) is -17.1 dBm. The LNA core area
is 0.18 mm2 and dissipates a total power of 11.5 mW from 1.4 V power
supply.%
\end{abstract}%



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\textbf{Hosted file}

\verb`3.3-4.3GHz LNA20230731.docx`  available at \url{https://authorea.com/users/645006/articles/657651-a-sub-6ghz-wideband-lna-with-high-gain-and-low-nf-in-110-nm-soi-cmos}

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